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AlInAsSb雪崩光电二极管的钝化研究
A passivation study for AlInAsSb avalanche photodiodes
| 作者 | Qi Lin · Hannaneh Karimi · Ellie Wang |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 127 卷 第 2 期 |
| 技术分类 | 储能系统技术 |
| 技术标签 | 储能系统 工商业光伏 可靠性分析 |
| 相关度评分 | ★★★★ 4.0 / 5.0 |
| 关键词 | 雪崩光电二极管 AlxIn1–xAsySb1–y合金 表面钝化 暗电流 器件性能 |
语言:
中文摘要
雪崩光电二极管（APD）在商业、军事和科研领域具有重要应用。近年来，AlxIn1–xAsySb1–y数字合金体系因其可调带隙、高雪崩增益和低过剩噪声，成为下一代APD的候选材料。然而，台面结构器件中刻蚀后的Al0.7InAsSb侧壁易发生表面氧化与缺陷形成，显著增加暗电流、降低信噪比并影响可靠性。有效的表面钝化对抑制暗电流、提升器件性能至关重要。本研究系统比较了SU-8聚合物、原子层沉积（ALD）HfO2及不同温度下沉积的ALD-Al2O3等钝化技术对生长于InP衬底上的Al0.7InAsSb p–i–n APD性能的影响。结果表明，150 °C下ALD-Al2O3钝化效果最佳，显著降低了器件暗电流。
English Abstract
Avalanche photodiodes (APDs) are vital for a wide range of commercial, military, and research applications. Recently, the AlxIn1–xAsySb1–y digital alloy system has emerged as a promising material for next-generation APDs, offering a broadly tunable bandgap, high avalanche gain, and low excess noise. However, surface oxidation and defect formation on the etched Al0.7InAsSb sidewalls of mesa-structure devices can significantly increase device dark currents, degrade the signal-to-noise ratio, and limit device reliability. Effective surface passivation is thus essential for suppressing dark current and enhancing device performance. In this study, we systematically compare the impact of different passivation techniques, including SU-8 polymer, atomic layer deposition (ALD)-HfO2, and ALD-Al2O3, deposited at various temperatures, on the performance of Al0.7InAsSb p–i–n APDs grown on InP substrates. Our results demonstrate that ALD-Al2O3 passivation at 150 °C achieves the most substantial redu
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SunView 深度解读
该AlInAsSb雪崩光电二极管钝化技术对阳光电源光伏及储能系统的光电检测模块具有重要参考价值。APD的低暗电流、高信噪比特性可应用于：1）SG系列逆变器的组串电流监测与故障电弧检测，ALD-Al2O3钝化工艺可提升传感器在高温环境下的可靠性；2）PowerTitan储能系统的电池热失控早期光学预警，高灵敏度APD可实现微弱光信号检测；3）iSolarCloud智能运维平台的光伏组件红外成像诊断，降低暗电流可提升夜间或低照度条件下的检测精度。该研究的表面钝化技术路线为阳光电源开发高可靠性光电传感器件提供了工艺优化方向，特别是150°C低温ALD工艺与现有封装工艺兼容性好，有助于提升产品智能化水平。