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宽禁带半导体器件开关振荡综述

A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices

语言:

中文摘要

宽禁带(WBG)器件凭借高频、高效及高功率密度优势,成为电力电子转换器的核心。然而,其极低的寄生电容与极快的开关速度导致开关振荡问题突出,易引发电压电流过冲、直通故障及电磁干扰,影响系统稳定性与可靠性。

English Abstract

Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and high power density to power converters due to their excellent performance. However, their low parasitic capacitance and fast switching speed also make them more susceptible to switching oscillations. The switching oscillations can cause voltage and current overshoots, shoot-through, electromagnetic interference...
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SunView 深度解读

随着阳光电源组串式逆变器及PowerTitan/PowerStack储能系统向高功率密度与高频化演进,SiC等宽禁带器件的应用已成必然。开关振荡不仅影响电磁兼容性(EMC),还可能导致功率模块失效,降低系统可靠性。建议研发团队在设计阶段利用该文献的理论基础,优化PCB布局以降低寄生参数,并结合有源门极驱动技术抑制振荡。这对于提升逆变器及PCS在复杂工况下的长期运行稳定性、减少电磁干扰设计难度具有重要指导意义。