用于NAND闪存系统的全集成数字辅助低压差线性稳压器

In this paper, a fully integrated digitally assisted low-dropout regulator (LDO) for a NAND flash memory system is proposed and verified using 500 nm I/O CMOS transistors. By combining an amplifier (AMP)-based LDO with a comparator (CMP)-based LDO, the proposed LDO achieves both fast load response in the transient state and accurate regulation in the steady state, which are advantages of the CMP-b...