精确确定现代太阳能电池J0e的挑战：输入参数不确定性的敏感性研究

Carrier recombination lifetime parameters, including effective lifetime (τeff), emitter saturation current density (J0e), and bulk lifetime (τbulk) on silicon photovoltaic cells, are essential quality metrics for sample characterization and enable power loss analyses that drive process optimization decisions. The carrier recombination lifetime of cells is derived from measured Suns-Voc data based on sample-specific inputs of substrate thickness and resistivity. This work presents a sensitivity analysis of the carrier recombination lifetime measurements on silicon photovoltaic cells due to uncertainty in input thickness and resistivity and proposes best practices to reduce these uncertainties to achieve results with a high level of confidence. J0e uncertainties less than 1 fA/cm2 can be achieved with measurement or knowledge of input parameters beyond what is given on a specification sheet.