原位MOVPE平滑处理声学剥离的GaAs以实现衬底再利用

High material costs, especially for substrates, have limited the widespread adoption of III–V photovoltaics. A potential to reduce this cost is to reuse the III–V substrate via acoustic spalling, however this technique can leave a rough surface, hindering subsequent device performance. This research investigates the potential of using metalorganic vapor-phase epitaxy growth as a buffer layer to smooth the surface of acoustically spalled germanium and gallium arsenide (GaAs) substrates for improved III–V photovoltaic cell yield and performance, while retaining the maximum number of reuses of a substrate. Three potential smoothing layers were explored: lightly doped C:GaAs, highly doped Se:GaInP, and lightly doped Se:GaInP. C:GaAs showed the most promise as a smoothing layer, while Se:GaInP tended to conform to the underlying morphology, potentially increasing roughness in some areas. Utilizing 5 m of C:GaAs as a planarizing buffer increased the average efficiency (without an antireflection coating) from an as-spalled baseline from 2.1% to 4.9% and performing a 5-min 30^ C 8:1:1 H_2SO_4:H_2O_2:H_2O etch prior to a 5 m of C:GaAs as a planarizing buffer further increased efficiency to 11.1%.