通过氩等离子体调控溶液法制备的无稀有金属非晶氧化物源极栅晶体管的费米能级

As the demand for sustainable, low-power electronics continues to grow, simpler fabrication techniques and compatible materials that meet the needs of emerging technologies are becoming more imperative. Source-gated transistors (SGTs) that consist of thin-film transistors and a Schottky diode have become exceptional candidates for low-power electronics due to their high gain and low operating voltages. SGTs achieve stable current at low voltages—an essential characteristic for energy-efficient devices. This study is the first to report a novel method of realizing SGTs by using solution-processed amorphous tin (IV) oxide as the channel material, where argon plasma treatment is applied selectively to modulate its Fermi energy and work function through the induction of oxygen vacancies and defects. Hence, eliminating the need for specialized Schottky source metals. We also explore the impact of varying Schottky contact lengths (SCLs) on the device performance, demonstrating a tunable strategy for optimizing electrical characteristics. These findings open new pathways for the development of low-power electronics, offering significant implications for the future of sustainable technology.