采用芯片-陶瓷散热封装的SiC功率模块EMI抑制方法

This letter proposes the use of a chip-on-ceramic heatsink packaging to reduce common-mode (CM) noise at the package level while improving thermal performance for SiC power modules. The packaging directly attaches the SiC mosfets to a metallized AlN ceramic heatsink, reducing CM capacitive coupling between the switching node and ground, thereby decreasing CM noise. A 400 to 200 V dc–dc buck converter is built to validate the effectiveness of the packaging in mitigating CM noise. The experimental results demonstrate a reduction in CM current, with a decrease of over 5 dB between 5 and 20 MHz frequency spectrum for the chip-on-ceramic heatsink power module compared to a conventional nonbaseplate module. Thermal test results indicate that the ceramic module exhibits better thermal performance than the conventional module, due to the reduced layers between the heatsink and the dice.