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电动汽车驱动 宽禁带半导体 ★ 4.0

大尺寸Co2+:ZnGa2O4单晶的生长与光学特性

Growth and optical properties of large-sized Co2+:ZnGa2O4 single crystal

作者 Zhengyuan Li1Jiaqi Wei2Yiyuan Liu1Huihui Li1Yang Li1Zhitai Jia1Xutang Tao1Wenxiang Mu1
期刊 半导体学报
出版日期 2025年1月
卷/期 第 46 卷 第 7 期
技术分类 电动汽车驱动
技术标签 宽禁带半导体
相关度评分 ★★★★ 4.0 / 5.0
关键词 Zhengyuan Li Jiaqi Wei Yiyuan Liu Huihui Li Yang Li Zhitai Jia Xutang Tao Wenxiang Mu 半导体学报(英文版) Journal of Semiconductors
语言:

中文摘要

四面体位点的Co²⁺离子在可见及近红外区域具有强吸收,有望用于1.5 μm人眼安全波长的被动调Q固体激光器。本文采用垂直梯度凝固法生长出体积约20 cm³的大尺寸高质量Co²⁺:ZnGa₂O₄晶体。XRD分析表明晶体为纯尖晶石相,半高宽仅58角秒;EDS测得Co²⁺浓度为0.2 at.%;光学带隙为4.44 eV。吸收光谱显示550–670 nm和1100–1700 nm处的吸收带分别对应于⁴A₂(⁴F)→⁴T₁(⁴P)和⁴A₂(⁴F)→⁴T₁(⁴F)跃迁,表明Co²⁺占据Zn²⁺四面体位。基态吸收截面达3.07×10⁻¹⁹ cm²,表明ZnGa₂O₄是近红外被动调Q激光器的优良候选材料。

English Abstract

The transition of cobalt ions located at tetrahedral sites will produce strong absorption in the visible and near-infrared regions,and is expected to work in a passively Q-switched solid-state laser at the eye-safe wavelength of 1.5 µm.In this study,Co2+ions were introduced into the wide bandgap semiconductor material ZnGa2O4,and large-sized and high-qual-ity Co2+-doped ZnGa2O4 crystals with a volume of about 20 cm3 were grown using the vertical gradient freeze(VGF)method.Crystal structure and optical properties were analyzed using X-ray powder diffraction(XRD),X-ray photoelectron spectroscopy(XPS),and absorption spectroscopy.XRD results show that the Co2+-doped ZnGa2O4 crystal has a pure spinel phase without impurity phases and the rocking curve full width at half maximum(FWHM)is only 58 arcsec.The concentration of Co2+in Co2+-doped ZnGa2O4 crystals was determined to be 0.2 at.%by the energy dispersive X-ray spectroscopy.The optical band gap of Co2+-doped ZnGa2O4 crystals is 4.44 eV.The optical absorption spectrum for Co2+-doped ZnGa2O4 reveals a prominent visible absorption band within 550-670 nm and a wide absorption band spanning from 1100 to 1700 nm.This suggests that the Co2+ions have substituted the Zn2+ions,which are typically tetrahedrally coordinated,within the lattice structure of ZnGa2O4.The vis-ible region's absorption peak and the near-infrared broad absorption band are ascribed to the 4A2(4F)→ 4T1(4P)and 4A2(4F)→4T1(4F)transitions,respectively.The optimal ground state absorption cross section was determined to be 3.07×10-19 cm2 in ZnGa2O4,a value that is comparatively large within the context of similar materials.This finding suggests that ZnGa2O4 is a promising candidate for use in near-infrared passive Q-switched solid-state lasers.
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SunView 深度解读

该Co²⁺:ZnGa₂O₄单晶材料虽属激光调Q器件领域,但其宽禁带半导体特性(4.44 eV带隙)对阳光电源功率器件研发具有参考价值。尖晶石结构的高晶体质量(XRD半高宽58角秒)和垂直梯度凝固法生长工艺,可启发SiC/GaN宽禁带器件的晶体缺陷控制技术。材料在近红外区域的强吸收特性,对光伏逆变器中光电转换效率优化、SG系列产品的光谱响应设计有借鉴意义。此外,四面体位点掺杂调控思路可应用于电动汽车驱动系统中功率模块的热管理材料开发,提升ST储能变流器和车载OBC的高温可靠性。