具有高共模抑制比和强dv/dt抗扰性的灵活1.5 GHz探头隔离扩展技术，赋能下一代宽禁带测量

Advancements in the next-generation wide-bandgap (WBG) power devices, distinguished by higher blocking voltage and faster switching speed, give rise to the advent of ultrahigh dv/dt. These three factors collectively impose demanding performance requirements on future high-performance measurement systems. This article conducts an in-depth exploration of the challenges encountered during the low- and high-side dynamic testing of the next-generation WBG device. Drawing from this examination, the performance requirements for future galvanically isolated testing systems are summarized, i.e., a broad dynamic range extending to medium voltage levels, a minimum measurement bandwidth of 500 MHz, a common-mode rejection ratio (CMRR) of at least 50 dB at 100 MHz, and a dv/dt immunity exceeding 100 V/ns. To effectively response these objectives, the concept of probe isolation extension (PIE) is introduced, with the aim of providing exceptional galvanic isolation while preserving the high electrical performance of traditional nonisolated testing systems to the greatest extent possible. Building upon the PIE concept, an optics-based physical implementation method, known as optical dock (OD), is presented. The operating principles of the OD are derived, and a detailed analysis is conducted to examine the factors that influence its high-frequency response. Additionally, parameter tuning methods are provided to maximize its bandwidth. These collective efforts have successfully resulted in the development of a high-performance PIE OD, which exhibits outstanding galvanic isolation capability, an ultrahigh bandwidth of 1.53 GHz, a high CMRR of 72 dB at 100 MHz, and robust dv/dt immunity of 1.3 kV/ns. Extensive comparative experiments with the state-of-the-art galvanically isolated probes/systems have demonstrated that by incorporating PIE OD to expand various different nonisolated probes/systems, precise characterization of all high-side dynamic electrical parameters, i.e., vgs, vds, and id, for the MV SiC mosfet can be achieved. This highlights the significant potential of the PIE OD for next-generation WBG and even ultra-WBG applications.