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新型纳米结构Ba2Ni(BO3)2的合成、结构表征、相稳定性及光学性质:面向电子应用的功能性正硼酸盐材料
Synthesis, structural characterization, phase stability, and optical properties of novel nanostructured Ba2Ni(BO3)2: toward functional orthoborates for electronic applications
| 作者 | Lahcen Boudad |
| 期刊 | Journal of Materials Science: Materials in Electronics |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 36.0 卷 |
| 技术分类 | 储能系统技术 |
| 技术标签 | 储能系统 |
| 相关度评分 | ★★★★ 4.0 / 5.0 |
| 关键词 | 正硼酸盐 宽禁带材料 固相法 晶格参数 带隙 |
语言:
中文摘要
本研究报道了新型正硼酸盐Ba2Ni(BO3)2作为潜在宽禁带材料的合成及其全面的表征。该化合物通过固相法成功制备为单相产物,结晶于菱方R\(\underline{3}\)m空间群,晶格参数精修值为a = 5.326(6) Å和c = 16.876(2) Å。傅里叶变换红外光谱(FTIR)分析证实了预期的三角平面[BO3]3−基团以及八面体配位的Ni2+离子,其特征振动模式亦通过拉曼光谱结果得到验证。扫描电子显微镜显示材料具有致密的纳米结构形貌,由针状微晶组成。该材料表现出优异的热稳定性,在600 °C以下结构保持稳定,并在800 °C时开始出现相变迹象。光学表征识别出典型的Ni2+ d–d电子跃迁。关键的是,基于吸收光谱数据的Tauc分析揭示出3.95 eV的直接光学带隙,表明Ba2Ni(BO3)2是一种在紫外光电子学和透明电子器件应用中极具前景的候选材料。
English Abstract
This work reports the synthesis and comprehensive characterization of the novel orthoborate Ba 2 Ni(BO 3 ) 2 as a potential wide-bandgap material. The compound was successfully synthesized as a single phase via a solid-state route, crystallizing in the rhombohedral R \(\underline{3}\) m space group with refined lattice parameters a = 5.326(6) Å and c = 16.876(2) Å. Fourier-transform infrared (FTIR) analysis confirmed the expected trigonal planar [BO 3 ] 3− units and octahedrally coordinated Ni 2+ through characteristic vibrational modes, as confirmed via the Raman spectroscopy results. Scanning electron microscopy revealed a dense, nanostructured morphology composed of needle-like crystallites. The material demonstrates high thermal stability, retaining its structure up to 600 °C before showing signs of a phase transition at 800 °C. Optical characterization identified characteristic Ni 2+ d–d electronic transitions. Crucially, Tauc analysis of the absorption data revealed a wide direct optical bandgap of 3.95 eV, establishing Ba 2 Ni(BO 3 ) 2 as a promising candidate material for applications in ultraviolet optoelectronics and transparent electronic devices.
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SunView 深度解读
该宽禁带正硼酸盐材料(3.95eV带隙)对阳光电源功率器件研发具有启发价值。其纳米结构形貌和高热稳定性(600°C以上)特性,可为ST系列储能变流器和SG逆变器中的SiC/GaN宽禁带半导体封装材料、高温绝缘层或紫外光传感器提供材料学参考。针状晶体的致密形态有助于提升器件散热性能,其宽带隙特性适用于开发耐高压透明电子元件,可优化三电平拓扑中的绝缘栅极驱动电路,提升PowerTitan储能系统和充电桩功率模块的可靠性与功率密度。