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高压宽禁带器件导通电压测量电路拓扑、运行及性能研究

Novel On-State Voltage Measurement Circuit Topology, Operation, and Performance for High-Voltage Wide-Bandgap Devices

语言:

中文摘要

准确测量半导体器件的导通电阻是评估宽禁带器件在不同应力下电气、热及长期可靠性的关键。监测导通电阻不仅能深入了解器件物理特性和退化机制,还可作为器件失效与老化的诊断预警手段。

English Abstract

Accurate measurement of on-resistance of semiconductor devices serves as a key indicator of how various stress factors impact the electrical, thermal, and long-term reliability performance of wide bandgap devices. Monitoring on-resistance not only offers technical insight into device physics and degradation mechanisms, but is also used as a diagnostic precursor to device failure and aging. This is...
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SunView 深度解读

该研究对于阳光电源的核心业务至关重要。随着SiC等宽禁带器件在PowerTitan储能系统及组串式光伏逆变器中的大规模应用,器件的可靠性评估与寿命预测成为提升产品竞争力的核心。该测量电路拓扑可集成至iSolarCloud智能运维平台或逆变器/PCS的控制板中,实现对功率模块实时健康状态(SOH)的监测,从而在故障发生前进行预警,显著降低运维成本。建议研发团队关注该电路在高温、高压工况下的抗干扰能力,并将其作为下一代高功率密度逆变器及储能变流器可靠性设计的重要参考。