一种基于正向压降磁滞曲线的高功率模块封装退化全模式状态监测新方法

Package degradation for high power insulated gate bipolar transistors (IGBTs) modules would seriously affect the operation safety of power electronic converters. Due to the variety of degradation modes, state-of-the-art monitoring methods still struggle to comprehensively evaluate the health status of the module. Therefore, this article aims to propose a novel condition monitoring method for full ...