铅-free梯度2D-3D钙钛矿太阳能电池的综合数值模拟与优化

Abstract 2D halide Perovskite materials have shown tremendous potential to be an integral part of the next-generation highly stable Photovoltaic devices. Although 2D halide material faces concerns related to charge transport for that reason 2D-3D T F B A 2 S n I 4 x ( F A S n I 3 ) 1 - x where the 2D bis(4-(trifluoromethyl) benzylammonium) tin iodide ( T F B A 2 S n I 4 ) and 3D formamidinium tin iodide ( F A S n I 3 ) graded halide perovskite structures emerged with interdependent leads. Besides providing long-term stability with the 2D halide material, the 3D halide is a concomitant material that lays out a better charge transport. Additionally, the graded bandgap structure lends a hand in ameliorating the absorption of the solar spectrum using perovskite absorber material. This work reports an Electron transport material (ETM) free Sn-based 3D-2D graded heterostructure, incorporating the narrow bandgap bulk perovskite material with wide bandgap Sn-based perovskite graded bandgap structure distribution from bulk to surface. A simulative analysis conducted on SCAPS 1D and optimization of several parameters is incorporated in this paper. The photovoltaic (PV) parameters are observed for different compositions of T F B A 2 S n I 4 x ( F A S n I 3 ) 1 - x perovskite, thicknesses of absorber layers and Hole transport material (HTM), metal work function, and defect densities of the absorber layer. Distinctive grading techniques have been employed in the absorber layer to encourage the absorption of a wide spectrum of solar wavelengths. The optoelectronic characteristics shown by the device include maximum short circuit current density ( J S C ) of 28.4 mA c m - 2 , open circuit voltage ( V O C ) 1.14 V, Fill factor (FF) is 83.55 % and the Power conversion efficiency (PCE) of 26.33 %.