探究铜前驱体对基于Cu2SnS3薄膜太阳能电池光伏性能的影响以实现9.85%的高效能量转换

Abstract In this study, we explored the effect of copper precursors on the photovoltaic properties of eco-friendly and earth-abundant Cu 2 SnS 3 (CTS) thin films deposited by the easy and economical SILAR method. Comprehensive characterization revealed the critical role of copper precursors in shaping the structural, morphological, optical, and electrical properties of CTS films. XRD, Raman spectroscopy and HRTEM revealed the successful formation of the Cu 2 SnS 3 phase, with the coexistence of the tetragonal and cubic structures. SEM images demonstrated considerable impact of the copper precursor on the morphology of the CTS films, revealing good surface compactness when using the acetate precursor. A uniform Cu-Sn-S distribution with a value close to the ideal stoichiometry of 2:1:3 of Cu 2 SnS 3 is verified by EDX. The direct optical bandgap energy showed a correlation with the copper precursor, giving values between 1.37 eV and 1.45 eV, ideal for use as absorber layers. Electrical Hall effect measurements carried out on the grown CTS layers exhibited a Hall mobility of 0.38 cm 2 /V.s for copper sulfate and 0.592 cm 2 /V.s for chloride and 3.56 cm 2 /Vs for acetate with p-type conductivity and a carrier concentration between 2.688 x 10 21 cm −3 and 6.672 x 10 21 cm −3 . Furthermore, the photovoltaic performance of solar cells based on CTS thin films , as prepared in this study, was measured using the SCAPS-1D simulator. The solar cell-based CTS films fabricated using the copper acetate precursor achieved an impressive power conversion efficiency (PCE) of 9.85 % and an improved open-circuit voltage (V oc ) of 739.85 mV. These results highlight an innovative and cost-effective solution for the production of scalable solar cells using copper acetate as a precursor in the SILAR synthesis of CTS thin films , avoiding the high costs and technical challenges associated with vacuum deposition techniques.