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高压处理与界面工程在Sb2Se3/CdS光伏器件中的协同效应
Synergistic effects of high-pressure processing and interface engineering in Sb2Se3/CdS photovoltaic devices
语言:
中文摘要
摘要 本文报道了一种创新的高压后沉积退火工艺，用于共蒸发制备的Sb2Se3吸收层，证实了该工艺在增强沿[00l]方向晶体学织构方面的有效性。该过程促进了沿c轴方向的择优生长，有利于载流子传输，并生成晶粒尺寸超过100 nm的高度结晶性薄膜。然而，尽管材料的结构性能得到改善，光伏性能仍受限于界面质量。为解决这一问题，我们采用了UV-O3和KCN刻蚀处理，显著改善了Sb2Se3/CdS界面，使光电转换效率提升至最高5.8%。XPS、UPS和接触角测量结果证实，这些处理方法能够选择性地修饰界面，而不改变材料的体相性质。因此，本研究凸显了将高压处理与靶向界面工程相结合，作为优化Sb2Se3基薄膜太阳能电池的一种有前景的策略。
English Abstract
Abstract We report an innovative high-pressure post-deposition annealing for co-evaporated Sb 2 Se 3 absorber layers, demonstrating for its effectiveness for enhancing the crystallographic texture along the [00 l] direction. This process promotes growth parallel to the c -axis, favoring carrier transport and yielding highly crystalline films with crystallite sizes exceeding 100 nm. Nonetheless, despite improved structural properties, photovoltaic performance remained limited by interface quality. To address this, we implemented UV-O 3 and KCN etching treatments, which significantly enhanced the Sb 2 Se 3 /CdS interface, leading to conversion efficiencies up to 5.8 %. XPS, UPS, and contact angle measurements confirmed that these treatments selectively modify the interface without altering bulk properties. Thus, this work highlights high-pressure treatments combined with targetes interface engineering as a promising strategy for optimizing Sb 2 Se 3 -based thin-film solar cells.
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SunView 深度解读
该Sb2Se3薄膜太阳能电池的高压退火与界面工程技术对阳光电源SG系列光伏逆变器及组件集成具有启发意义。研究中的高压后处理提升晶体取向和载流子传输效率,可借鉴于光伏系统MPPT优化算法改进;界面工程通过UV-O3和KCN处理提升转换效率至5.8%的思路,与阳光电源在SiC/GaN功率器件界面优化、三电平拓扑损耗控制方面形成技术协同。该薄膜电池制备工艺可为分布式光伏场景下的高效组件开发提供新材料路径,配合iSolarCloud平台的性能监测,推动光储一体化系统效率提升。