基于外壳温度作为参考节点的功率模块集总热耦合模型

Insulated gate bipolar transistor (IGBT) modules with multiple chips have wide range of applications, and the correct estimation for the thermal behaviors inside IGBT modules is becoming crucial. Thermal impedance matrix is one of the most adopted approaches to describe the thermal-coupling effect of IGBT module. For simplicity of analysis, the heatsink or ambient temperature is typically chosen a...