用于电磁暂态仿真中功率半导体损耗评估的IGBT-二极管开关单元电气暂态模型

An electrical transient model (ETM) of insulated-gate bipolar transistor (IGBT)-diode switching cell is developed by coupling a temperature-dependent IGBT model with power loss model. The nonlinear behavior of IGBT and the reverse recovery characteristic of the diode are considered in this model to simulate the transient switching waveforms. Based on the transient waveforms of ETM under various op...