功率循环过程中铝金属化层微观结构演变对其电气性能影响的研究

The study presented in this paper contributes to the quantification of the correlations between resistance degradation and Al metallization layer reconstruction observed in high-power insulated gate bipolar transistor (IGBT) modules during power cycling. The microstructure evolution that occurs in the Al metallization layer during power cycling was investigated via electron and ion microscopy, and...