一种具有高电压增益的新型半桥阻抗源逆变器

In this letter, a new half-bridge impedance source inverter (HBISI) with high voltage conversion ratio is developed. Compared with other well-known existed HBISIs (HB-qZSIs/HB-qSBIs), the proposed HBI can increase the voltage boost factor significantly. Only a very small shoot-through (ST) duty cycle (Dsh) is required to produce a higher voltage gain. The upper and lower switches of the inverter b...