考虑非恒定应力下键合线退化的大电流IGBT模块寿命预测

As power electronic systems evolve towards higher power and density, the reliability of high-current Insulated Gate Bipolar Transistor (IGBT) modules has gained increasing attention. However, most existing studies focus on degradation prior to bond wire lift-off under constant stress, overlooking the non-constant stress conditions and multiple degradation jumps common in practical applications. This paper presents a lifetime prediction method for bond wire degradation in high-current IGBT modules, utilizing degradation jump trends under non-constant stress without requiring extensive prior failure data. This method develops a novel degradation estimation model (DEM) that maintains the degradation indicator, on-resistance at the reference temperature (RCE0), independent of junction temperature and load current under non-constant stress. A DC power cycling test is modified to induce and validate bond wire degradation under non-constant stress. Additionally, a non-constant stress degradation model (NCSDM) is introduced to capture nonlinear degradation between varying stress levels. By detecting degradation jumps and analyzing their trends, the proposed NCSDM enables accurate lifetime prediction for individual high-current IGBT modules. Experimental results confirm the effectiveness and applicability of the proposed method.