考虑珀尔帖效应和汤姆逊效应的4H-SiC GTO晶闸管改进热模型

Silicon carbide (SiC) gate turn-off thyristors (GTOs), distinguished by their high current density, high blocking voltage, high switching frequency, and excellent thermal resistance, are highly suitable as pulse switches in pulsed power systems. However, their reliability remains a critical issue requiring urgent attention. Existing research on the thermal failure mechanisms of SiC GTOs is limited, partly due to the neglect of p-n junction voltage effects on thermal distribution. In this work, the Seebeck coefficient (S) in the thermodynamic model is modified, which considers for the first time the previously neglected Peltier and Thomson heats induced by the Seebeck effect in 4H-SiC GTOs. Simulation analysis reveals that the modified model captures localized heat concentration beneath the GTO anode with enhanced accuracy. The modified model predicts approximately 1 10^9 W/cm2 more heat generation within the 6- m region beneath the anode. This result highlights the model’s ability to capture the Seebeck effect, which was omitted in the default TCAD model, providing a more accurate representation of the thermal behavior in 4H-SiC GTOs and other bipolar power devices.