低漏电流β-Ga₂O₃自对准沟槽结势垒肖特基二极管

We demonstrate the fabrication of -Ga2O3 self-aligned trench junction barrier Schottky (TJBS) diodes with a high breakdown voltage (BV) and suppressed reverse leakage current, in which the micrometer-deep trenches were formed using the Schottky anode metal as an etching mask and subsequently covered by a layer of p-type nickel oxide (NiO). High BVs of over 2 kV were achieved in small area devices ( 0.43 0.43 mm2) while maintaining an ultralow reverse leakage current density of around 10^-5 A/cm2 until breakdown. A TCAD simulation analysis revealed that the deep trenches covered with p-NiO can effectively reduce the surface electric field of the proposed device and provide sufficient p-shielding effects. Additionally, the packaged large-area -Ga2O3 TJBS diodes ( 3 3 mm2) show a forward current I _F and BV of 15 A/820 V. The results demonstrate that the self-aligned TJBS structure offers critical insights into reducing reverse leakage current and improving high current-handling capabilities in large-area devices.