1200V E型p-GaN栅极HEMT的电荷平衡设计以提升击穿电压和动态稳定性

This work investigates the charge balance design of the 1200-V E-mode lateral superjunction p-GaN gate HEMT (SJ-HEMT) on sapphire substrate. The charge balance is formed through the alternative p-/n-pillars; the p-pillars are thinned p-GaN stripes, and the n-pillars are 2DEG stripes. The charge balance design on the static and dynamic performance of the SJ-HEMT was investigated by tuning the width of p-/n-pillars. The SJ-HEMT with charge balance yields a BV of 2655 V and a high BV/ L_ GD ratio of 1.56 MV/cm. Notably, the SJ-HEMT demonstrates effective suppression of trapping effects, which exhibits a strong correlation with the gap between two p-pillars. At charge balance design, the SJ-HEMT presents an excellent dynamic R_ ON /static R_ ON ratio of 1.28 under V_ DS stress up to 1200 V. Our study also indicates a scaling of p-/n-pillars can further improve the dynamic R_ ON performance. This work underscores the merits of charge-balanced design for high-performance 1200-V E-mode GaN power transistors.