SnO/β-Ga2O3异质结的能带对齐及其在功率器件应用中的电学特性

In this study,we present the fabrication of vertical SnO/β-Ga2O3 heterojunction diode(HJD)via radio frequency(RF)reactive magnetron sputtering.The valence and conduction band offsets between β-Ga2O3 and SnO are determined to be 2.65 and 0.75 eV,respectively,through X-ray photoelectron spectroscopy,showing a type-Ⅱ band alignment.Compared to its Schot-tky barrier diode(SBD)counterpart,the HJD presents a comparable specific ON-resistances(Ron,sp)of 2.8 mΩ·cm² and lower reverse leakage current(IR),leading to an enhanced reverse blocking characteristics with breakdown voltage(BV)of 1675 V and power figure of merit(PFOM)of 1.0 GW/cm².This demonstrates the high quality of the SnO/β-Ga2O3 heterojunction inter-face.Silvaco TCAD simulation further reveals that electric field crowding at the edge of anode for the SBD was greatly depressed by the introduction of SnO film,revealing the potential application of SnO/β-Ga2O3 heterojunction in the future β-Ga2O3-based power devices.