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应力工程化的半导体量子阱单光子发射器
Stress-engineered single-photon emitters in semiconductor quantum wells
| 作者 | Jian Wang · Xiaomin Zhang · Baoquan Sun |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 126 卷 第 16 期 |
| 技术分类 | 储能系统技术 |
| 技术标签 | 储能系统 |
| 相关度评分 | ★★★★ 4.0 / 5.0 |
| 关键词 | 单光子源 量子阱 双轴应变 制备方法 量子器件 |
语言:
中文摘要
通过在原子级薄的过渡金属硫族化合物中引入点状应变扰动制备的阵列化单光子源,因其纳米尺度的定位精度而受到广泛关注。然而,目前在同样为二维半导体材料的量子阱中尚无相关研究。相比过渡金属硫族化合物,量子阱具有可调带隙的独特优势,意味着由此方法在量子阱中制备的单光子源波长可覆盖更宽范围。本文在量子阱薄膜中引入局域双轴应变,实现了确定性单光子发射器的制备,验证了该方法在量子阱中构建单光子源的可行性,为发展实用化量子器件提供了新途径。
English Abstract
The arrayed single-photon sources fabricated by introducing point-like strain perturbations in atomically thin transition metal dichalcogenides (TMDs) have attracted widespread attention due to their nanoscale localization precision, which offers significant advantages in practical applications. However, to date, there has been no related research in quantum wells (QWs), which are also two-dimensional semiconductor materials. Compared to TMDs, QWs possess the unique advantage of a tunable bandgap, which means the wavelength of the single-photon sources fabricated using this method in QWs can cover a broad range. Here, we introduce local bi-axial strain in the QW film and deterministically fabricate single-photon emitters. Our results demonstrate the feasibility of fabricating single-photon sources in QWs. This method provides an interesting pathway for exploring practical quantum devices, with the potential to achieve significant breakthroughs in the fields of photonics and quantum inf
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SunView 深度解读
该量子阱单光子发射器技术虽属前沿量子光学领域,但其应力工程调控半导体能带的思路对阳光电源功率器件研发具有启发意义。在SiC/GaN宽禁带半导体器件中,应力调控可优化载流子输运特性,提升ST系列储能变流器和SG逆变器中功率模块的开关性能与可靠性。该技术的纳米级精准定位方法可借鉴至功率芯片缺陷检测,结合iSolarCloud智能诊断平台实现器件级预测性维护。此外,可调带隙的应变工程理念可应用于光伏电池材料优化,拓宽光谱响应范围,提升组件转换效率。虽直接应用存在技术跨度,但其物理机制为半导体器件性能提升提供了新思路。