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★ 4.0
基于交错排列的二维共振隧穿二极管太赫兹振荡器阵列的功率增强
Power enhancement in two-dimensional resonant-tunneling-diode terahertz oscillator arrays with staggered arrangement
| 作者 | |
| 期刊 | Applied Physics Letters |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 126 卷 第 18 期 |
| 技术分类 | 电动汽车驱动 |
| 相关度评分 | ★★★★ 4.0 / 5.0 |
| 关键词 | 太赫兹振荡器阵列 共振隧穿二极管 功率性能 阵列缩放 相干振荡 |
语言:
中文摘要
设计并制备了一种基于共振隧穿二极管(RTD)的二维太赫兹振荡器阵列。该阵列采用高效槽型谐振器作为单元,通过反相RTD对的交错排列结构实现二维布局,并利用共用电阻耦合提升功率合成效率。由于RTD方向相反,增强了输出功率。尽管8单元阵列因幅度分布不均导致输出受限,但可通过扩展阵列规模及引入金属-绝缘体-金属电容加以改善。实验结果显示,最大821 μW输出功率出现在397 GHz,596 GHz时仍保持498 μW,展现出良好的二维相干振荡特性。
English Abstract
We design and fabricate a two-dimensional terahertz oscillator array based on resonant-tunneling diodes. The two-dimensional array utilizes high-efficiency slot resonators as array elements, enabling enhancement in power performance. The two-dimensional arrangement is achieved by the staggered configuration of anti-phase resonant-tunneling diode (RTD) pairs coupled by common resistors, while power combination is enhanced since the RTDs are in opposite orientations. Despite the output power of the 8-element arrays being constrained by non-uniform amplitude distribution, this issue can be mitigated through intensive array scaling, as well as the introduction of metal–insulator–metal capacitors. The fabricated arrays comprising up to eight RTDs exhibit coherent oscillation two-dimensionally, featuring a peak output power of 821 _μ_ W at 397 GHz, and maintaining 498 _μ_ W at 596 GHz. With improved oscillation uniformity, a linear increase in output power with array scaling-up can be expect
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SunView 深度解读
该RTD太赫兹振荡器阵列的功率合成技术对阳光电源功率器件设计具有借鉴价值。其核心创新在于:1)通过反相器件对的交错排列实现二维功率扩展,可启发SiC/GaN功率模块的并联拓扑优化;2)共用电阻耦合的相干振荡机制,类似于ST储能变流器多模块并联时的环流抑制与功率均衡策略;3)高频谐振器设计思路可应用于SG逆变器的EMI滤波器优化和开关频率提升。特别是其解决幅度分布不均的思路,对PowerTitan大型储能系统中数百个功率单元的协同控制具有参考意义,有助于提升系统功率密度和转换效率。