一种用于1kV输入1MHz GaN LLC变换器同步整流的无传感器模型驱动方案

For 1-MHz GaN LLC converters with 1-kV input, the switching speed of eGaN high-electron mobility transistors (HEMTs) is as fast as 6 ns, which results in dv/dt up to 200 kV/μs. It poses serious challenge for synchronous rectification (SR). A sensorless model-based SR driving scheme for high voltage applications is proposed to optimize the efficiency at steady state and the complementary control as...