压电应变介导的Co2FeSi/V/PMN-PT多铁异质结构磁隧道结中隧穿磁电阻效应的调控

Electric field ( _E_) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore _E_ control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied _E_ to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain _E_. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.