栅极驱动器和共源电感对IGBT模块短路行为及保护的影响

In this article, the influence of the gate drive unit on the short-circuit (SC) type II and III behavior of insulated gate bipolar transistor (IGBT) modules was investigated in detail. It is found that the real gate voltage of the IGBT chip contacts cannot be measured across the auxiliary pins of a power module. The difference between applied gate voltage at the sense contacts and the real gate vo...