III-V族同质/异质结线型TFET的性能优化：器件-电路协同效应

Abstract In this work, we optimize the parameters of the epitaxial layer doping, thickness (N epi , T epi ), gate overlap length (L ov ) for the n-type III–V materials (InGaAs, InP, GaAsSb) based Line tunnel field effect transistor (L-TFET). The L-TFET with III–V materials gives a high ON current and steep subthreshold slope with less power consumption. This improvement in the device performance is due to the small bandgap of the III–V materials. The optimized values of L ov , N epi , and T epi are 4 nm, 1 × 10 19 cm −3 , and 20 nm, respectively. The optimized parameters can be used for designing homo/heterojunction III–V material-based L-TFETs, and it found that the performance of GaAsSb/InGaAs heterojunction L-TFET is better in terms of I on /I off ratio, transconductance (g m ) and subthreshold swing (SS). We have designed the inverter using n-type and p-type InGaAs homojunction and GaAsSb/InGaAs heterojunction L-TFETs to analyze the voltage transfer characteristics (VTC) and transient response of the inverter.