通过氧等离子体处理改善三层HfO2/Al2O3/HfO2 RRAM的阻性开关特性

In this study, a tri-layer HfO2/Al2O3/HfO2 (7/6/7 nm) structure was fabricated using a cost-effective RF sputtering process and treated with oxygen plasma to serve as the resistive switching (RS) active layer for RRAM devices. Compared with a single-layer HfO2 and an untreated tri-layer structure, the oxygen plasma-treated device exhibited significantly enhanced performance. These improvements include a higher ON/OFF current ratio, extended endurance exceeding 1600 cycles, and stable retention beyond 10^4 seconds. Furthermore, multilevel resistive switching behavior was reliably demonstrated by modulating the compliance current. The results highlight the effectiveness of oxygen plasma treatment in improving switching uniformity and electrical stability, while maintaining a scalable and industry-friendly fabrication process. This work underscores the potential of plasma-treated tri-layer structures for high-density, multi-level non-volatile memory applications.