具有复合终端结构和衬底减薄的1200-V/10-A低热阻Ga₂O₃肖特基势垒二极管

In this work, a superior-performance -Ga2O3 vertical Schottky barrier diode (SBD) with high breakdown voltage, low thermal resistance, low on-resistance, high surge current, and high Baliga’s figure of merit (FOM) is achieved by a composite terminal structure of mesa and dual field plate, combined with substrate thinning process. Grinding and polishing are utilized to eliminate the subsurface damage layer, thereby achieving a low ohmic resistance. Benefitting from the thinned substrate with a thickness of 85~ m, the on-resistance of device with 2 2 mm2 anode area decreases from 174 to 112 m . As a result, the corresponding forward current increases from 6.04 to 10.1 A at a bias of 2 V, and the surge current increases from 20 to 29 A. More importantly, the thermal resistance of the packaged device significantly reduces from 6.45 to 2.21 K/W, which is comparable to those of commercial SiC SBDs. Besides, a record Baliga’s FOM of 342 MW/cm2 with a breakdown voltage of over 1200 V is reached among reported -Ga2O3 SBDs with large anode area ( 1.5 1.5 mm2). The results show the broad prospects of Ga2O3 SBD in high-voltage and high-power electronic devices.