具有氦注入边缘终端的3.0 kV β-Ga2O3基垂直p-n异质结二极管

We demonstrated the vertical NiO/ -Ga2O3 p-n heterojunction diodes (HJDs) with a high breakdown voltage ( V_ BR ) of 3000 V and a low on-resistance ( R_ on, {sp} ) of 3.12 m cm2, resulting in a Baliga’s figure of merit (FOM) of 2.88 GW/cm2. Specifically, an efficient and low-damage edge termination (ET) formed by the implantation of lightweight Helium atoms was introduced to inhibit the high electric field at the p-n junction of HJDs, thereby increasing V_ BR of devices from 1330 to 3000 V. The reverse leakage mechanisms were fit and analyzed, revealing distinct breakdown mechanisms in He-implanted devices. The simulation results confirmed the peak electric field at the p-n junction of devices can be effectively suppressed by He-implanted ET. Meanwhile, a narrow change of devices’ R_ on, {sp} occurred after He implantation and the low- R_ on, {sp} forward conduction of devices was confirmed by efficient charge transfer of heterojunction with density functional theory (DFT) calculation. This work may provide a new insight into the design and fabrication of high-power, low-loss -Ga2O3 bipolar power devices.