提升基于IGCT的高功率应用中的关断性能——第一部分：超低电压下的异常大电流关断模式与安全工作区扩展

Integrated gate commutated thyristors (IGCTs) are renowned for their low on-state voltage and high surge current capability, but their limited ability to turn off current has historically limited their application. This article investigates an anomalous high current turn-off mode in IGCTs under ultralow voltage conditions. Through comprehensive theoretical analysis and simulation, it is demonstrated that IGCTs can achieve turn-off capabilities several times their rated current at ultralow voltage, defying the traditional requirement for strict gate commutation conditions. This discovery significantly expands the safe operating area (SOA) of IGCTs, offering a new perspective on optimizing their use in high-power applications. The findings presented here establish a foundation for the companion paper, which explores hybrid switch designs that further enhance IGCT turn-off performance by leveraging this phenomenon.