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★ 5.0
基于(Sr,Ca)ZrO3-Sr0.75Bi0.167TiO3陶瓷的U2J介质材料的制备与介电性能
Fabrication and dielectric properties of U2J dielectrics based on (Sr,Ca)ZrO3-Sr0.75Bi0.167TiO3 ceramics
| 作者 | Paraelectric U2J dielectrics have great potential for use in power electronics. In this work |
| 期刊 | Journal of Materials Science: Materials in Electronics |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 36.0 卷 |
| 技术分类 | 智能化与AI应用 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | 顺电型 U2J介质材料 介电性能 Sr0.75Bi0.167TiO3 CaZrO3 |
语言:
中文摘要
顺电型U2J介质材料在电力电子领域具有广阔的应用前景。本研究系统地探讨了(1-x)Sr0.75Bi0.167TiO3-x(SryCa1-y)ZrO3陶瓷体系U2J介质材料的制备工艺及其介电性能。当x = 0.2–0.5时,(1-x)Sr0.75Bi0.167TiO3-xCaZrO3陶瓷中存在杂相;在0.5Sr0.75Bi0.167TiO3-0.5(SryCa1-y)ZrO3体系中,随着Sr含量的增加,杂相含量逐渐降低。当x = 0.5且y = 0.2时,材料表现出最优的介电性能,满足U2J介质的要求(τε = −683 ppm·°C−1),同时具有较高的介电常数(124.5)和较低的介电损耗(< 0.001)。当前样品温度系数的改善归因于A位离子在较小A位键价条件下产生的“ rattling”效应。通过添加Li2CO3和MnCO3,致密陶瓷的烧结温度从1350°C降低至1240°C,并且在N2气氛中烧结时表现出不可还原特性。若能进一步降低烧结温度,该陶瓷材料有望应用于Cu电极U2J介质器件中。
English Abstract
Paraelectric U2J dielectrics have great potential for use in power electronics. In this work, fabrication and dielectric properties of U2J dielectrics based on (1-x)Sr 0.75 Bi 0.167 TiO 3 -x(Sr y Ca 1-y )ZrO 3 ceramics system were investigated. The impurity phase exists in (1-x)Sr 0.75 Bi 0.167 TiO 3 -xCaZrO 3 for x = 0.2–0.5. The content of impurity phase decreases in 0.5Sr 0.75 Bi 0.167 TiO 3 -0.5(Sr y Ca 1-y )ZrO 3 with increasing Sr content. The optimized dielectric properties are obtained at x = 0.5 and y = 0.2, and the ceramics satisfies U2J dielectric requirements (τ ε = − 683 ppm °C −1 ) together with high dielectric constant (124.5) and low dielectric loss (< 0.001). The modified temperature coefficient for the present samples is due to the rattling effect of A-site ion for the smaller A-site bond valence. With the addition of Li 2 CO 3 and MnCO 3 , the sintering temperature for dense ceramic is reduced from 1350 to 1240 °C and nonreducible characteristics are obtained when sintering in N 2 atmosphere. The present ceramic has potential application for Cu electrode U2J dielectric if the sintering temperature can be lowered further.
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SunView 深度解读
该U2J介电陶瓷技术对阳光电源功率电子产品具有重要应用价值。其高介电常数(124.5)、低损耗(<0.001)和优异温度稳定性(-683ppm/°C)特性,可显著提升ST系列PCS和SG逆变器中直流母线电容、滤波电容的性能密度。1240°C低温烧结工艺支持铜电极应用,有助于降低成本。该材料的温度补偿特性可改善PowerTitan储能系统和充电桩在宽温度范围(-40~85°C)的运行稳定性,减少温控需求,提升系统可靠性和能量密度,为SiC/GaN高频化应用提供关键无源器件支撑。