SnO2及席夫碱基SnO2纳米粒子的结构、光学和电阻开关行为

Phenomenon of resistive switching and alteration of resistive state under the gradient of electrical potential is observed in metal oxides thin film. Such type of activity is exploited in Resistive switching-based memory devices. Here, we report electric field-induced switching behavior from one resistive state to other resistive state in nano-sized SnO 2 and Schiff base-modified SnO 2 materials. From the gradually rise in interest toward more reliable and high energy storage devices, metal oxides with Schiff base doping are investigated. Instability in resistive state of metal oxides are driven through field-induced lattice distribution which causes a scattering of mobile electron of different strength. The emergence of resistive switching in SnO 2 along with Ohmic nature. Resistive switching behavior is less studied in bulk form; but such unconventional type of approach provides a more space toward the theoretical studies and their proper understanding.