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储能系统技术
★ 5.0
通过涂覆PZT/SiO2异质结构阻挡层增强聚醚酰亚胺介电薄膜的高温储能性能
Enhanced high-temperature energy storage in polyetherimide dielectric films via coating PZT/SiO2 heterostructural barrier layers
| 作者 | The National Engineering Research Center of UHV Technology · Novel Electrical Equipment Basis |
| 期刊 | Journal of Materials Science: Materials in Electronics |
| 出版日期 | 2025年1月 |
| 卷/期 | 第 36.0 卷 |
| 技术分类 | 储能系统技术 |
| 相关度评分 | ★★★★★ 5.0 / 5.0 |
| 关键词 | PZT/SiO2异质结 聚醚酰亚胺 高温储能性能 击穿强度 介质损耗 |
语言:
中文摘要
传统的聚合物薄膜电容器由于在高温下电导损耗显著增加,导致性能严重退化。本研究旨在通过构建PZT/SiO2异质结复合介电结构,提升聚醚酰亚胺(PEI)薄膜的高温储能性能。采用溶液浇铸法制备PEI薄膜,并通过磁控溅射技术在其表面沉积PZT和SiO2层进行改性。在150 °C条件下,该复合薄膜表现出636.7 MV/m的高击穿强度、4.28 J/cm³的放电能量密度,以及超过90%的充放电效率。PZT/SiO2异质结能有效抑制电荷注入,降低漏电流,并显著提高循环稳定性,在经历50000次充放电循环后性能退化极小。这种可扩展的制备方法为开发适用于高温环境的高性能聚合物基储能材料提供了有前景的技术途径。
English Abstract
Conventional polymer film capacitors suffer from significant performance degradation at high temperatures due to increased conductivity loss. This study aims to enhance the high-temperature energy storage performance of polyetherimide (PEI) films by constructing a PZT/SiO 2 heterojunction composite dielectric structure. PEI films were prepared by solution casting and then modified by magnetron sputtering to deposit PZT and SiO 2 layers. At 150 °C, the composite films exhibited a high breakdown strength of 636.7 MV/m, a discharged energy density of 4.28 J/cm 3 , and a charge–discharge efficiency exceeding 90%. The PZT/SiO 2 heterojunction effectively inhibited charge injection, reducing leakage current and improving cyclic stability with minimal degradation after 50000 charge–discharge cycles. This scalable method offers a promising approach for developing high-performance polymer-based energy storage materials suitable for high-temperature applications.
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SunView 深度解读
该高温聚合物薄膜电容技术对阳光电源储能系统具有重要应用价值。PZT/SiO2异质结构实现150°C高温下4.28 J/cm³能量密度和90%以上效率,可显著提升PowerTitan储能系统和ST系列PCS在高温环境下的功率密度与可靠性。5万次循环稳定性为光储一体化系统提供长寿命电容方案,特别适用于中东、澳洲等高温地区部署。该技术可优化DC-link电容设计,减小储能变流器体积,提升系统集成度,为1500V高压储能系统提供关键无源器件支撑。