提升混合电网换相换流器中反向阻断IGCT的dv/dt抗扰度

The dv/dt induced turn-on is an undesirable triggering event of integrated gate-commutated thyristor (IGCT). In this letter, we aim to improve the dv/dt immunity of the IGCT in the hybrid line-commutated converter (H-LCC), which is a newly proposed topology that can reduce the commutation failure probability. First, the mechanism of the dv/dt induced turn-on is revealed. Second, it is proved evide...