通过引入无毒(Zn,In)S缓冲层实现界面修饰以促进Sb2Se3薄膜太阳能电池中的电子提取

Abstract Antimony selenide (Sb 2 Se 3 ) solar cells have captivated the interest of researchers due to their unique material properties and promising optoelectronic functionalities. The performance of Sb 2 Se 3 -based photovoltaic devices is tied to the interplay between the absorber and buffer layers, forming a critical junction that significantly influences the overall efficiency. Traditionally, the buffer layer in Sb 2 Se 3 cells relies on toxic and parasitic light-absorbing cadmium sulfide (CdS), hindering its widespread adoption. In this work, we present an alternative approach by introducing a non-toxic zinc indium sulfide ((Zn,In)S) buffer layer with a composition-dependent energy structure. We find that the (Zn,In)S layer, with an optimal indium content (In/(Zn + In) ratio of 0.11), effectively modifies the Sb 2 Se 3 /(Zn,In)S band alignment. This modification not only suppresses carrier recombination at the interface but also enhances carrier transport. In traditional Sb 2 Se 3 /CdS cells, there is a significant negative conduction band offset (CBO) of 0.4 eV. However, by incorporating a Zn 0.89 In 0.11 S buffer layer, the conduction band is raised, reducing the negative CBO to a more favorable value of 0.07 eV. The incorporation of the Zn 0.89 In 0.11 S buffer layer not only effectively reduces the negative CBO but also creates a wider bandgap between its conduction band and the valence band of Sb 2 Se 3 , thereby significantly reducing interface recombination. Simulation results further support the effectiveness of this approach, indicating that the Sb 2 Se 3 /Zn 0.89 In 0.11 S cell efficiency can reach 17.75 %, which is a notable improvement over traditional Sb 2 Se 3 /CdS cells. This finding underscores the crucial role of interfacial engineering in boosting the Sb 2 Se 3 cell performance.