背接触界面复合对CZT(S,Se)薄膜太阳能电池效率的影响：一种理论视角

Abstract Efficiency degradation resulting from interfacial carrier losses at the junction between the absorber layer and metallic back contact remains a major limitation for CZT(S,Se) thin-film photovoltaic devices—an environmentally friendly, earth-abundant kesterite material system. This study presents a theoretical framework that integrates both experimental trends and TCAD-based numerical simulations to examine and mitigate such interface-induced losses. The model incorporates critical interfacial phenomena, including band alignment and asymmetric recombination kinetics, without requiring high fabrication complexity. Simulation results demonstrate that targeted interface optimization—especially via barrier modulation and passivation techniques—can significantly reduce nonradiative recombination and improve carrier collection. The model predicts that optimizing the back interface can raise the power conversion efficiency from 12.6 % to > 17.0 %, mainly by enhancing the open-circuit voltage (V OC ) and fill factor. This work introduces a novel, predictive framework that enables targeted interface engineering in kesterite solar cells and provides a valuable tool to guide next-generation experimental designs for high-efficiency, low-cost solar energy technologies.