优化CdS下方的TiO2夹层以实现高效Sb2S3室内光伏器件

Abstract Antimony sulfide (Sb 2 S 3 ) has emerged as a strong candidate for indoor photovoltaics (IPVs), owing to its near-optimal bandgap (∼1.7 eV) that aligns well with white LED emission. In this study, we engineer a TiO 2 interlayer beneath the CdS buffer layer to planarize the FTO surface and reduce CdS consumption. Optimizing the TiO 2 precursor concentration at 0.08 M results in a uniform, conformal interlayer with favorable surface potential and morphology. Devices incorporating this TiO 2 interlayer achieve a power conversion efficiency (PCE) of 15.04 % under 1000 lux (3347 K) white LED illumination, while the 0.12 M TiO 2 interlayer attains the highest outdoor efficiency of 6.72 % under 1 sun. Introducing TMT-TTF into the hole transport layer further elevates indoor PCE to 16.54 % and outdoor PCE to 7.14 %. These results underscore the dependence of charge transport behavior at the TiO 2 /CdS interface on illumination intensity, highlighting the need for tailored interfacial engineering in high-performance Sb 2 S 3 IPVs.